Nuclear doping of silicon

Factors, conditioned by instability of electrical properties of silicon monocrystals, in the process of doping subjected to irradiation and heat treatment, have been considered in detail, as well as such factors as doping degree and degree of compensation. It is shown, that during doping of p-type material the final homogeneity of rho values will depend on the value of concentration variation of the initial acceptor impurity and compensation degree, attained after the doping. During the doping of n-type material the content of both donor and acceptor impurity should be limited