Published May 16, 1983
| Version v1
Journal article
On the diffusion profile of boron in silicon at high concentrations
Description
An analysis of the boron diffusion profile in silicon at high surface concentration is presented. Boron diffusion was performed at 1373 K for 20 min. A good agreement was found between theoretical calculations and the experimental data
Additional details
Publishing Information
- Journal Title
- Phys. Status Solidi A
- Journal Volume
- 77
- Journal Issue
- 1
- Journal Series
- Phys. Status Solidi A.
- Journal Page Range
- K59-K61
- ISSN
- 0031-8965
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 14795122
- Subject category
- MATERIALS SCIENCE;
- Quality check status
- Yes
- Descriptors DEI
- BORON; DEPTH; DIFFUSION; ETCHING; LAYERS; SILICON; SPATIAL DISTRIBUTION;
- Descriptors DEC
- DIMENSIONS; DISTRIBUTION; ELEMENTS; SEMIMETALS; SURFACE FINISHING;
Optional Information
- Notes
- Short note.