Published November 16, 2015 | Version v1
Journal article Metadata-only

Effect of space layer doping on photoelectric conversion efficiency of InAs/GaAs quantum dot solar cells

Creators

  • 1. Quantum-Function Research Laboratory and Department of Physics, Hanyang University, Seoul 133-791 (Korea, Republic of)
  • 2. Center for Opto-Electronic Convergence Systems, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of)

Description

We report an effect of photoelectric conversion efficiency (PCE) by space layer doping in InAs/GaAs quantum dot solar cells (QDSC) and δ-doped QDSC grown by molecular beam epitaxy. The PCEs of QDSC and δ-doped QDSC without anti-reflection coating were 10.8% and 4.3%, respectively. The QDSC had about four electrons per QD, and its ideality factor was temperature-independent, which implies that recombination of electron-hole pairs is suppressed by strong potential barriers around charged dots. From the deep level transient spectroscopy measurements, four defect levels, including QD with the activation energy ranges from 0.08 eV to 0.50 eV below GaAs conduction band edge, appeared. Especially, the M1 defect (Ec-0.14 eV) was newly formed in δ-doped QDSC and its density was higher than those of M3 (Ec-0.35 eV) and M4 (Ec-0.50 eV) levels in QDSC. These results suggest that the photo-carriers recombining at M1 defect might be responsible for the reduction of PCE in δ-doped QDSC

Additional details

Identifiers

DOI
10.1063/1.4935940;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
107
Journal Issue
20
Journal Page Range
p. 203503-203503.5
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
47056087
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
ACTIVATION ENERGY; CARRIERS; CONVERSION; DEEP LEVEL TRANSIENT SPECTROSCOPY; DOPED MATERIALS; EFFICIENCY; EV RANGE; GALLIUM ARSENIDES; HOLES; INDIUM ARSENIDES; LAYERS; MOLECULAR BEAM EPITAXY; POTENTIALS; QUANTUM DOTS; SOLAR CELLS
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; DIRECT ENERGY CONVERTERS; ENERGY; ENERGY RANGE; EPITAXY; EQUIPMENT; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MATERIALS; NANOSTRUCTURES; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; PNICTIDES; SOLAR EQUIPMENT; SPECTROSCOPY

Optional Information

Notes
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