Published July 1, 1982
| Version v1
Journal article
Analysis of the magnetoresistance of a two-carrier semiconductor
Description
An analysis of the experimental dependence of magnetoresistance on the magnetic field has been carried out taking p-InSb as an example. An important result is the information about the relative density of states in the bands and about the ratio of the effective masses of light and heavy holes. The validity of Kane's model is confirmed to the valence band of InSb
Additional details
Publishing Information
- Journal Title
- Phys. Status Solidi B
- Journal Volume
- 112
- Journal Issue
- 1
- Series
- Phys. Status Solidi B.
- Journal Page Range
- K25-K28
- ISSN
- 0370-1972
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 13713672
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANTIMONIDES; BAND THEORY; CARRIER DENSITY; CARRIER MOBILITY; ELECTRONIC STRUCTURE; HALL EFFECT; INDIUM COMPOUNDS; LOW TEMPERATURE; MAGNETIC FIELDS; MAGNETORESISTANCE; P-TYPE CONDUCTORS
- Descriptors DEC
- ANTIMONY COMPOUNDS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; MOBILITY; PHYSICAL PROPERTIES; SEMICONDUCTOR MATERIALS
Optional Information
- Notes
- Short note.