Equivalent properties of single event burnout induced by different sources
Description
The experimental results of single event burnout induced by heavy ions and 252Cf fission fragments in power MOSFET devices have been investigated. It is concluded that the characteristics of single event burnout induced by 252Cf fission fragments is consistent to that in heavy ions. The power MOSFET in the 'turn-off' state is more susceptible to single event burnout than it is in the 'turn-on' state. The thresholds of the drain-source voltage for single event burnout induced by 173 MeV bromine ions and 252Cf fission fragments are close to each other, and the burnout cross section is sensitive to variation of the drain-source voltage above the threshold of single event burnout. In addition, the current waveforms of single event burnouts induced by different sources are similar. Different power MOSFET devices may have different probabilities for the occurrence of single event burnout. (authors)
Additional details
Publishing Information
- Journal Title
- Chinese Physics. C, High Energy Physics and Nuclear Physics
- Journal Volume
- 33
- Journal Issue
- 5
- Journal Page Range
- p. 369-373
- ISSN
- 1674-1137
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 41125244
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- BROMINE IONS; BURNOUT; CALIFORNIUM 252; CROSS SECTIONS; ELECTRIC POTENTIAL; FISSION FRAGMENTS; HEAVY IONS; MOSFET; PHYSICAL RADIATION EFFECTS; PROBABILITY; SENSITIVITY; WAVE FORMS
- Descriptors DEC
- ACTINIDE NUCLEI; ALPHA DECAY RADIOISOTOPES; CALIFORNIUM ISOTOPES; CHARGED PARTICLES; EVEN-EVEN NUCLEI; FIELD EFFECT TRANSISTORS; HEAVY NUCLEI; IONS; ISOTOPES; MOS TRANSISTORS; NUCLEAR FRAGMENTS; NUCLEI; RADIATION EFFECTS; RADIOISOTOPES; SEMICONDUCTOR DEVICES; SPONTANEOUS FISSION RADIOISOTOPES; TRANSISTORS; YEARS LIVING RADIOISOTOPES
Optional Information
- Notes
- 7 figs., 6 tabs., 7 refs.