Published January 1, 2012 | Version v1
Journal article

A 0.8–3 GHz RF-VGA with 35 dB dynamic range in 0.13 μm CMOS

  • 1. State Key Laboratory of ASIC and System, Fudan University, Shanghai 201203 (China)

Description

A wideband variable gain amplifier (VGA) implemented in 0.13 μm CMOS technology is presented. To optimize noise performance, an active feedback amplifier with 15 dB fixed gain is put in the front, followed by modified Cherry—Hooper amplifiers in cascade providing variable gain, which adopt dual loop feedback for bandwidth extension. Negative capacitive neutralization and capacitive source degeneration are employed for Miller effect compensation and DC offset cancellation, respectively. Measurement results show that the proposed VGA achieves a 35 dB gain tuning range with an upper 3-dB bandwidth larger than 3 GHz and the input 1 dB compression point of −29 dBm at the lowest gain state, while the minimum noise figure is 9 dB at the highest gain state. The core VGA (without test buffer) consumes 32 mW from 1.2 V power supply and occupies 0.48 mm2 area. (semiconductor integrated circuits)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-4926/33/1/015009

Additional details

Publishing Information

Journal Title
Journal of Semiconductors
Journal Volume
33
Journal Issue
1
Journal Page Range
[6 p.]
ISSN
1674-4926

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43108233
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
AMPLIFIERS; COMPRESSION; FEEDBACK; GHZ RANGE 01-100; INTEGRATED CIRCUITS; NOISE; PERFORMANCE; SEMICONDUCTOR MATERIALS
Descriptors DEC
ELECTRONIC CIRCUITS; ELECTRONIC EQUIPMENT; EQUIPMENT; FREQUENCY RANGE; GHZ RANGE; MATERIALS; MICROELECTRONIC CIRCUITS