Radiation defect formation at ion implantation of semiconductors in the presence of force fields

The depth distribution of secondary vacancy complexes at ion implantation in the presence of steady and uniform force field, acting on simplest mobile radiation defects (vacancies and interstitials), is calculated theoretically. It is shown that the presence of sufficiently strong field in semiconductor may considerably change the distribution of secondary defects. Thus, it opens the principal possibility to govern the radiation damage e.g. to separate the position of the damage and implanted impurities. The influence of target temperature on the damage distribution in the presence of force is evaluated as well. (author)