Published February 21, 2024 | Version v1
Journal article

Competition of disorder and electron-phonon coupling in 2HTaSe2xSx(0x2) as evidenced by Raman spectroscopy

  • 1. Institute of Physics Belgrade, University of Belgrade, Pregrevica 118, 11080 Belgrade, Serbia
  • 2. Departamento de Física de Materiales, Facultad de Ciencias, Universidad Autónoma de Madrid, 28049 Madrid, Spain
  • 3. Department of Physics & NANOlab Center of Excellence, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
  • 4. Condensed Matter Physics and Material Science Department, Brookhaven National Laboratory, Upton, New York 11973-5000, USA
  • 5. Center for Correlated Matter and School of Physics, Zhejiang University, Hangzhou 310058, People's Republic of China
  • 6. Shanghai Key Laboratory of Material Frontiers Research in Extreme Environments (MFree), Shanghai Advanced Research in Physical Sciences (SHARPS), Pudong, Shanghai 201203, China
  • 7. Department of Nuclear and Plasma Physics, Vinca Institute of Nuclear Sciences, University of Belgrade, Belgrade 11001, Serbia
  • 8. Serbian Academy of Sciences and Arts, Knez Mihailova 35, 11000 Belgrade, Serbia

Description

The vibrational properties of 2HTaSe2xSx (0x2) single crystals were probed using Raman spectroscopy and density functional theory calculations. The end members revealed two out of four symmetry-predicted Raman active modes, together with the pronounced two-phonon structure, attributable to the enhanced electron-phonon coupling. Additional peaks become observable due to crystallographic disorder for the doped samples. The evolution of the E2g2 mode Fano parameter reveals that the disorder has a weak impact on electron-phonon coupling, which is also supported by the persistence of two-phonon structure in doped samples. As such, this research provides thorough insights into the lattice properties, the effects of crystallographic disorder on Raman spectra, and the interplay of this disorder with the electron-phonon coupling in 2HTaSe2xSx compounds.

Additional details

Identifiers

DOI
10.1103/PhysRevMaterials.8.024004;
arXiv
arXiv:2312.09421;
Crossref Funder ID
10.13039/501100004564; 10.13039/501100016047; 10.13039/501100003130; 10.13039/100000015; 10.13039/501100000921; 10.13039/501100003399;

Publishing Information

Journal Title
Physical Review Materials
Journal Volume
8
Journal Issue
2
Journal Page Range
8 pgs.
ISSN
2475-9953