Published March 12, 2008 | Version v1
Journal article

Aligned ultra-long single-crystalline α-Si3N4 nanowires

  • 1. Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China)
  • 2. Institute of Materials, Ningbo University of Technology, Ningbo 315016 (China)
  • 3. Advanced Materials Processing and Analysis Center, University of Central Florida, Orlando, FL 32816 (United States)

Description

We report the synthesis of aligned ultra-long single-crystalline α-Si3N4 nanowires by pyrolysis of a polymeric precursor without any template. The length of the wires is up to several centimeters, which is significantly longer than that of any Si3N4 wires reported previously. Microscopy characterization reveals that the wires are single crystals, with a uniform diameter of ∼200 nm. Intense visible photoluminescence was observed between 1.3 and 3.7 eV. The wires could be useful in the fabrication of optoelectronic nanodevices and nanocomposites

Availability note (English)

Available from http://dx.doi.org/10.1088/0957-4484/19/10/105602

Additional details

Identifiers

DOI
10.1088/0957-4484/19/10/105602;
PII
S0957-4484(08)65030-8;

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
19
Journal Issue
10
Journal Page Range
[4 p.]
ISSN
0957-4484