Published July 15, 2001
| Version v1
Journal article
Spatial correlations and Raman scattering interferences in self-assembled quantum dot multilayers
- 1. Max Planck Institut fuer Festkoerperforschung, Heisenbergstrasse 1, 70569 Stuttgart (Germany)
- 2. Laboratoire de Physique des Solides, UMR 5477, Universite P. Sabatier, 118 Route de Narbonne, 31062 Toulouse Cedex 4 (France)
Description
Raman scattering is shown to provide an effective means to measure spatial correlations in self-assembled quantum dot multilayers. Raman scattering interferences occur when an acoustic phonon interacts with an ensemble of localized electronic states. The interference contrast depends on their spatial correlations. Vertical correlations in self-assembled Ge/Si quantum dot multilayers are deduced from the interference contrast and successfully compared with those measured by transmission electron microscopy
Additional details
Identifiers
Publishing Information
- Journal Title
- Physical Review. B, Condensed Matter and Materials Physics
- Journal Volume
- 64
- Journal Issue
- 3
- Journal Page Range
- p. 033306-033306.4
- ISSN
- 1098-0121
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35094040
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- COMPARATIVE EVALUATIONS; ELECTROMAGNETIC RADIATION; GERMANIUM; INTERFERENCE; PHONONS; QUANTUM DOTS; RAMAN EFFECT; RAMAN SPECTRA; SEMICONDUCTOR MATERIALS; SILICON; TRANSMISSION ELECTRON MICROSCOPY
- Descriptors DEC
- ELECTRON MICROSCOPY; ELEMENTS; EVALUATION; MATERIALS; METALS; MICROSCOPY; NANOSTRUCTURES; QUASI PARTICLES; RADIATIONS; SEMIMETALS; SPECTRA
Optional Information
- Notes
- (c) 2001 The American Physical Society