Investigating the role of hydrogen in silicon deposition using an energy-resolved mass spectrometer and a Langmuir probe in an Ar/H2 radio frequency magnetron discharge

The plasma parameters and ion energy distributions (IED) of the dominant species in an Ar-H2 discharge are investigated with an energy resolved mass spectrometer and a Langmuir probe. The plasmas are generated in a conventional magnetron chamber powered at 150 W, 13.56 MHz at hydrogen flow rates ranging from 0 to 25 sccm with a fixed argon gas flow rate of 15 sccm. Various Hn+, SiHn+, SiHn fragments (with n = 1, 2, 3) together with Ar+ and ArH+ species are detected in the discharge. The most important species for the film deposition is SiHn (with n = 0, 1, 2). H fragments affect the hydrogen content in the material. The flux of Ar+ decreases and the flux of ArH+ increases when the hydrogen flow rate is increased; however, both fluxes saturate at hydrogen flow rates above 15 sccm. Electron density, ne, electron energy, Te, and ion density, ni, are estimated from the Langmuir probe data. Te is below 1.2 eV at hydrogen flow rates below 8 sccm, and about 2 eV at flow rates above 8 sccm. ne and ni decrease with increased hydrogen flow but the ratio of ni to ne increases. The formation of H+ ions with energies above 36 eV and electrons with energies greater than 2 eV contributes to the decrease in hydrogen content at hydrogen flow rates above 8 sccm. Analysis of the IEDs indicates an inter-dependence of the species and their contribution to the thin film growth and properties.