Application of neutron activation analysis for the determination of implantation profiles of phosphorus in semiconductor grade silicon

A method for the determination of concentration profiles of phosphorus in silicon by neutron activation has been elaborated. It is based on the previously described extraction methods, in which phosphorus is extracted as phosphomolybdic complex with isoamyl alcohol. It was suitably modified and Au and Ta holdback carriers were used in order to diminish the extraction of these elements together with phosphorus. The method permits to achieve decontamination factors of 102-103 for the elements found in the Si plates examined. The yield of phosphorus separation is nearly constant and amounts to 84%. Layers are removed from the annealed plate by anodic oxidation and by dissolving the oxide formed on the surface in diluted hydrofluoric acid. The thickness of the removed layers is determined from previously prepared calibration curves. The lower limit of determination is of the order 10-11g P. Two groups of errors have been discussed. The suitability of autoradiography to the determination of concentration profiles has been demonstrated. Some applications of the method are suggested. (T.G.)