Published July 6, 1992
| Version v1
Journal article
Molecular-beam epitaxial growth and surface diffusion
- 1. Department of Physics and Institute for Nonlinear Science, University of California, San Diego, La Jolla, California 92093 (United States)
- 2. Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1120 (United States)
Description
We investigate the statistical properties of the surface of thin films grown by molecular-beam epitaxy (MBE). We present and analyze a simple model of MBE growth which incorporates surface diffusion and deposition in a physically correct manner. The short-time behavior does not correspond to that predicted by the continuum model of Villain, Das Sarma, and others. At long times, the model is governed by Kardar-Parisi-Zhang dynamics
Additional details
Publishing Information
- Journal Title
- Physical Review Letters
- Journal Volume
- 69
- Journal Issue
- 1
- Journal Page Range
- p. 100-103.
- ISSN
- 0031-9007
- CODEN
- PRLTAO
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 24013707
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- COMPUTERIZED SIMULATION; DIFFUSION; DYNAMICS; EPITAXY; MICROSTRUCTURE; MOLECULAR BEAMS; NUMERICAL ANALYSIS; ROUGHNESS; SCALING LAWS; STATISTICAL MECHANICS; SURFACE PROPERTIES
- Descriptors DEC
- BEAMS; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; MATHEMATICS; MECHANICS; SIMULATION