Published February 2, 2007 | Version v1
Journal article

The Silicon Environment in Silica Polymorphs, Aluminosilicate Crystals and Melts: An In Situ High Temperature XAS Study

  • 1. IMPMC, Universite Pierre et Marie Curie, Universite Denis Diderot, CNRS UMR 7590, 140 rue de Lourmel, 75015 Paris (France)
  • 2. Physique des Mineraux et des Magmas, CNRS, IPGP, 4 place Jussieu, 75005 Paris (France)
  • 3. LPCML, UCBL, 12 rue Ampere, 69622 Villeurbanne (France)
  • 4. Department of Geology, University of Toronto, 22 Russell Street, Toronto, M5S 3B1 Ontario (Canada)
  • 5. Synchrotron SOLEIL, L'Orme des Merisiers, BP48, 91192 Gif-sur-Yvette cedex (France)

Description

High temperature X-ray absorption spectroscopy at the Si K-edge has been used to obtain in situ information on SiO2 phase transitions upon heating. Important modifications are observed for the XANES spectra of the high temperature polymorphs, in relation to disordering of the SiO4 tetrahedra beyond the short-range correlations. This paper also presents the XANES spectra of anorthite (CaAl2Si2O8) from room temperature up to the melt (1900 K). This study shows the possibilities for determining the Si environment in crystals and glasses up to the liquid state using in situ XANES measurements

Additional details

Identifiers

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
882
Journal Issue
1
Journal Page Range
p. 416-418
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
13. international conference on X-ray absorption fine structure
Acronym
XAFS13
Dates
9-14 Jul 2006
Place
Stanford, CA (United States)

Optional Information

Notes
(c) 2007 American Institute of Physics