Published 1974
| Version v1
Journal article
Ion implantation as doping procedure in semiconductor technology
Description
Following a brief survey on the development of the doping procedure in the semiconductor technology, the production of high-energy ion beams and the procedures in the semiconductor during ion implantation are described and examples of application for the production of electronic components and radiation detectors are given. (HP)
Abstract (German)
Nach einem kurzen Ueberblick ueber die Entwicklung der Dotierverfahren in der HL-Technik werden die Erzeugung hochenergetischer Ionenstrahlen und die Vorgaenge im HL bei der Ionenimplantation beschrieben und Anwendungsbeispiele fuer die Herstellung elektronischer Bauteile und Strahlungsdefektoren mitgeteilt. (HP)Additional details
Additional titles
- Original title (German)
- Ionenimplantation als Dotierverfahren in der Halbleitertechnologie
Publishing Information
- Journal Title
- Funk-Tech.
- Journal Issue
- no. 15
- Series
- Funk-Tech.
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 6204050
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- CRYSTAL DOPING; DOPED MATERIALS; ELECTRONIC EQUIPMENT; FABRICATION; ION BEAMS; ION CHANNELING; ION IMPLANTATION; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- BEAMS; CHANNELING; MEASURING INSTRUMENTS; RADIATION DETECTORS
Optional Information
- Notes
- 9 figs.; 5 refs.