Integration of thin layers of single-crystalline InP with flexible substrates

Transfer of thin semiconductor layers onto flexible substrates using a combination of ion cutting, adhesive bonding, and laser ablation was investigated. An ∼1.3 μm thick InP layer was first transferred onto sapphire using adhesive bonding and hydrogen-induced layer exfoliation at ∼180 deg. C. The resulting structure was then adhesively bonded onto flexible polyethylene naphthalate substrate, followed by UV laser ablation of the first adhesive to separate the initial bond. Additional transfer steps were inserted into the process to enable thermal annealing and electrical recovery. The transferred films were electrically characterized and the potential use in high-speed, flexible electronics is discussed