A new high-voltage level-shifting circuit for half-bridge power ICs
Creators
- 1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)
Description
In order to reduce the chip area and improve the reliability of HVICs, a new high-voltage level-shifting circuit with an integrated low-voltage power supply, two PMOS active resistors and a current mirror is proposed. The integrated low-voltage power supply not only provides energy for the level-shifting circuit and the logic circuit, but also provides voltage signals for the gates and sources of the PMOS active resistors to ensure that they are normally-on. The normally-on PMOS transistors do not, therefore, need to be fabricated in the depletion process. The current mirror ensures that the level-shifting circuit has a constant current, which can reduce the process error of the high-voltage devices of the circuit. Moreover, an improved RS trigger is also proposed to improve the reliability of the circuit. The proposed level-shifting circuit is analyzed and confirmed by simulation with MEDICI, and the simulation results show that the function is achieved well. (semiconductor integrated circuits)
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-4926/34/10/105012Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Semiconductors
- Journal Volume
- 34
- Journal Issue
- 10
- Journal Page Range
- [6 p.]
- ISSN
- 1674-4926
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47010267
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ELECTRIC POTENTIAL; ERRORS; INTEGRATED CIRCUITS; LOGIC CIRCUITS; RESISTORS; SEMICONDUCTOR MATERIALS; SIGNALS; SIMULATION
- Descriptors DEC
- ELECTRICAL EQUIPMENT; ELECTRONIC CIRCUITS; EQUIPMENT; MATERIALS; MICROELECTRONIC CIRCUITS