Published October 1, 2013 | Version v1
Journal article

A new high-voltage level-shifting circuit for half-bridge power ICs

  • 1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

Description

In order to reduce the chip area and improve the reliability of HVICs, a new high-voltage level-shifting circuit with an integrated low-voltage power supply, two PMOS active resistors and a current mirror is proposed. The integrated low-voltage power supply not only provides energy for the level-shifting circuit and the logic circuit, but also provides voltage signals for the gates and sources of the PMOS active resistors to ensure that they are normally-on. The normally-on PMOS transistors do not, therefore, need to be fabricated in the depletion process. The current mirror ensures that the level-shifting circuit has a constant current, which can reduce the process error of the high-voltage devices of the circuit. Moreover, an improved RS trigger is also proposed to improve the reliability of the circuit. The proposed level-shifting circuit is analyzed and confirmed by simulation with MEDICI, and the simulation results show that the function is achieved well. (semiconductor integrated circuits)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-4926/34/10/105012

Additional details

Publishing Information

Journal Title
Journal of Semiconductors
Journal Volume
34
Journal Issue
10
Journal Page Range
[6 p.]
ISSN
1674-4926

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
47010267
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ELECTRIC POTENTIAL; ERRORS; INTEGRATED CIRCUITS; LOGIC CIRCUITS; RESISTORS; SEMICONDUCTOR MATERIALS; SIGNALS; SIMULATION
Descriptors DEC
ELECTRICAL EQUIPMENT; ELECTRONIC CIRCUITS; EQUIPMENT; MATERIALS; MICROELECTRONIC CIRCUITS