2D substrate imaging of a tapered laser cavity based on InGaAs quantum dots

Tapered cavities are an excellent solution to obtaining high brightness semiconductor laser sources for use in applications from frequency doubling to material processing. The high power density levels reached in such lasers can lead to nonlinear mechanisms related to the refractive index variations that de-stabilise the optical field distribution inside the laser cavity. These mechanisms are detrimental to the beam quality of the laser limiting its focussing ability. In this work we map the spatial distribution and evolution of the carrier density in tapered lasers as a function of injection current. A device with a taper length of 2.75 mm, taper angle of 60 and ridge length of 1.25 mm is used to demonstrate the principle. The active region consists of three layers of InGaAs quantum dots emitting around 950 nm. A window for imaging the spontaneous emission profile through the transparent GaAs substrate was formed by patterning the n-contact metal layer. The imaging was performed in the continuous wave regime to include the thermal-induced refractive index perturbation. The results show a non-uniform carrier and thermal distribution inside the cavity even at low current levels.