Surface-enhanced Raman scattering on gold quasi-3D nanostructure and 2D nanohole arrays
Creators
- 1. Department of Chemical Engineering, Center for Nanotechnology, University of Washington, Seattle, WA 98195 (United States)
- 2. State Key Laboratory of Bioreactor Engineering, East China University of Science and Technology, Shanghai 200237 (China)
Description
A new method was developed to fabricate unique gold quasi-3D plasmonic nanostructures on poly(dimethylsiloxane) PDMS and 2D nanohole arrays on silicon as surface-enhanced Raman scattering (SERS) substrates using electron beam lithography (EBL) with negative tone resist Ma-N 2403 and soft lithography. The size and shape of nanopillars fabricated by EBL were well controlled via different beam conditions. An enhancement factor (EF) as high as 6.4 x 105 was obtained for 4-mercaptopyridine molecules adsorbed on the gold quasi-3D nanostructure array on PDMS with 400 nm diameter, 100 nm spacing and 300 nm depth, while no enhancement was observed for the gold 2D nanohole array on silicon with the same diameter and spacing. The experimental results were confirmed by finite-difference time-domain (FDTD) calculations. Furthermore, the calculated total electric fields showed that the strong SERS exhibited by the gold quasi-3D nanostructure arrays on PDMS is due to the strong localized electric fields at the gold-air interface of the bottom gold nanodisc. The strong and reproducible SERS spectroscopy for molecules adsorbed on precisely controlled gold quasi-3D nanostructure arrays on PDMS makes it possible for the integration of SERS-active nanopatterns into microfluidic devices as chemical and biological sensors with molecular specificity.
Availability note (English)
Available from http://dx.doi.org/10.1088/0957-4484/21/35/355301Additional details
Identifiers
- DOI
- 10.1088/0957-4484/21/35/355301;
- PII
- S0957-4484(10)56714-X;
Publishing Information
- Journal Title
- Nanotechnology (Print)
- Journal Volume
- 21
- Journal Issue
- 35
- Journal Page Range
- [9 p.]
- ISSN
- 0957-4484
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43024936
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- ELECTRIC FIELDS; ELECTRON BEAMS; GOLD; INTERFACES; MOLECULES; NANOSTRUCTURES; RAMAN EFFECT; SENSORS; SILICON; SPECIFICITY; SPECTROSCOPY; SUBSTRATES; SURFACES
- Descriptors DEC
- BEAMS; ELEMENTS; LEPTON BEAMS; METALS; PARTICLE BEAMS; SEMIMETALS; TRANSITION ELEMENTS