Published 1994 | Version v1
Miscellaneous

Particularities of interface delineation of homoepitaxial layers grown on semi-insulating substrates of GaAs and InP

  • 1. Belorusskij Gosudarstvennyj Univ., Minsk (Belarus)

Description

Short communication

Part of:
Abstracts of 8. Conference on Semi-Insulating 3-5 Materials

Additional details

Publishing Information

Imprint Place
Warsaw (Poland)
Imprint Title
Abstracts of 8. Conference on Semi-Insulating 3-5 Materials
Imprint Pagination
[100 p.].
Journal Page Range
p. P-34.

Conference

Title
8. Conference on Semi-Insulating 3-5 Materials.
Dates
6-10 Jun 1994.
Place
Warsaw (Poland).

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
28061038
Subject category
S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference, No Abstract, Non-conventional Literature
Descriptors DEI
EPITAXY; FILMS; GALLIUM ARSENIDES; INDIUM PHOSPHIDES; INTERFACES; MEETINGS; SUBSTRATES
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES

Optional Information