Published August 18, 2014
| Version v1
Journal article
Dual function armchair graphene nanoribbon-based spin-photodetector: Optical spin-valve and light helicity detector
- 1. Department of Physics, Tarbiat Modares University, P.O. Box 14115-335, Tehran 1411713116 (Iran, Islamic Republic of)
- 2. Faculty of Electrical and Computer Engineering, Advanced Devices Simulation Lab (ADSL), Tarbiat Modares University, P.O. Box 14115-194, Tehran 1411713116 (Iran, Islamic Republic of)
Description
We show an armchair graphene nanoribbon channel connected between asymmetric ferromagnetic source-drain structure—i.e., p-type Co/Au/graphene source and n-type Co/Cu/graphene drain—can operate as dual function spin-photodetector, under zero external biases at room temperature. It can function as an optical spin-valve with magnetoresistance of greater than 60% and responsivity as high as 25.12 A/mW, when irradiated by an un-polarized light of energy ∼3.03 eV. Under a circularly polarized illumination, this optical spin-valve can also operate as a light helicity detector. The calculated magnetoresistances for right and left circularly polarized lights are both greater than 60%.
Additional details
Identifiers
- DOI
- 10.1063/1.4893604;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 105
- Journal Issue
- 7
- Journal Page Range
- p. 072407-072407.5
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46017064
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- ASYMMETRY; COBALT; COPPER; EV RANGE; GOLD; GRAPHENE; HELICITY; ILLUMINANCE; IRRADIATION; MAGNETORESISTANCE; NANOSTRUCTURES; PHOTODETECTORS; P-TYPE CONDUCTORS; SPIN; TEMPERATURE RANGE 0273-0400 K; VISIBLE RADIATION
- Descriptors DEC
- ANGULAR MOMENTUM; CARBON; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELEMENTS; ENERGY RANGE; MATERIALS; METALS; NONMETALS; PARTICLE PROPERTIES; PHYSICAL PROPERTIES; RADIATIONS; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE; TRANSITION ELEMENTS
Optional Information
- Notes
- (c) 2014 AIP Publishing LLC