Published October 1997
| Version v1
Journal article
Electron traps in GaAs grown by molecular beam epitaxy (MBE)
Creators
- 1. Lahore Coll. for Women, Lahore (Pakistan)
- 2. Manchester Univ. (United Kingdom). Inst. of Science and Technology
Description
The electron traps in GaAs grown by MBE have been studied. The trap concentrations have been studied as a function of growth temperature (410-600 deg. C). This temperature range is much wider than the already reported temperature ranges. Previously reported M series of electron traps has been observed. EL2 is reported for the first time as a minority carrier trap in p-type MBE GaAs. Recombination calculation using measured electron and hole capture cross sections suggest that the electron traps M4 and ELl-Cr may act as non radiative recombination centres in p-type GaAs under low level injection conditions. (author)
Additional details
Publishing Information
- Journal Title
- Science International (Lahore)
- Journal Volume
- 9
- Journal Issue
- 4
- Journal Page Range
- p. 341-344
- ISSN
- 1013-5316
INIS
- Country of Publication
- Pakistan
- Country of Input or Organization
- Pakistan
- INIS RN
- 29062472
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- GALLIUM ARSENIDES; MOLECULAR BEAM EPITAXY; P-TYPE CONDUCTORS; TEMPERATURE RANGE 0400-1000 K; TRAPS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; EPITAXY; GALLIUM COMPOUNDS; MATERIALS; PNICTIDES; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE