Room temperature mid-infrared InAsSbN multi-quantum well photodiodes grown by MBE

Room temperature photoresponse in the mid-infrared spectral region is demonstrated from InAsSbN/InAs multi-quantum well photodiodes grown by nitrogen plasma assisted molecular beam epitaxy. The structural quality of the InAsSbN MQWs was ascertained in situ by reflection high energy electron diffraction and ex situ by high resolution x-ray diffraction and photoluminescence measurements. The extended long wavelength photoresponse is identified to originate from the electron–heavy hole (e₁–hh₁) and electron–light hole (e₁–lh₁) transitions in the InAsSbN MQW, with a cut off wavelength ∼4.20 µ m and peak detectivity D ^*  =  1.25  ×  10⁹ cm Hz^1/2 W⁻¹. (paper)