Published September 2010 | Version v1
Journal article

Simulation of ion-track ranges in uranium oxide

  • 1. Department of Applied Science, University of California, Davis, CA 95616 (United States)
  • 2. Department of Chemical Engineering and Materials Science, University of California, Davis, CA 95616 (United States)
  • 3. Department of Materials Science and Engineering, University of California, Berkeley, CA 94720 (United States)
  • 4. Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM 87544 (United States)

Description

Direct comparisons between statistically sound simulations of ion-tracks and published experimental measurements of range densities of iodine implants in uranium dioxide have been made with implant energies in the range of 100-800 keV. Our simulations are conducted with REED-MD (Rare Event Enhanced Domain-following Molecular Dynamics) in order to account for the materials structure in both single crystalline and polycrystalline samples. We find excellent agreement between REED-MD results and experiments for polycrystalline target materials.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.nimb.2010.06.004

Additional details

Identifiers

DOI
10.1016/j.nimb.2010.06.004;
arXiv
arXiv:1004.0490v1;
PII
S0168-583X(10)00578-1;

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
Journal Volume
268
Journal Issue
17-18
Journal Page Range
p. 2688-2693
ISSN
0168-583X
CODEN
NIMBEU

Optional Information

Copyright
Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.