Computer simulation of MeV ion-surface backscattering

A computer program is described which attempts to simulate closely the actual processes of energy loss, deflections and backscattering of ions in a crystalline solid. Results are reported of calculations for 1 MeV He ions incident on silicon close to a <110> direction, both for an unreconstructed surface and at a surface which has undergone a 2 x 1 reconstruction in a conjugated-chain model. The predicted backscattered spectra differ, but not in any simple way that may be identified with differences in surface structure. (author)