Facile, scalable and transfer free vertical- MoS 2 nanostructures grown on Au/ SiO 2 patterned electrode for photodetector application

Highlights: • A systematic CVD grown of V-MoS₂ nanosheets on various substrates is developed. • A photodetector based on V-MoS₂ is fabricated with facile and transfer free process. • The photodetector shows fast switching behavior (100 ms) and considerable performance. Transition metal dichalcogenides such as molybdenum disulfide (MoS₂) have attracted considerable attention for use in optoelectronic devices. However, their large scale monolayer production seems to be limited due to scalability, layers size and fabrication process. While, a prominent photoluminescence was reported for vertically aligned MoS₂ (V-MoS₂) nanosheets similar to MoS₂ mono- and few- layer, as highly promising counterparts for development of optoelectronic devices. Here, we report a systematic method to fabricate V-MoS₂ nanosheets using a chemical vapor deposition (CVD) technique. The growing density and morphology of V-MoS₂ nanosheets are controlled by adjusting growth parameters. The V-MoS₂ nanosheets form in 2H phase and have thickness of ∼10–80 nm and the lateral dimension of 1–2.5 $\mu m$. Furthermore, a photodetector platform is fabricated based on V-MoS₂ nanosheets with considerable performance and transfer free process with scalable manufacturing ability. The V-MoS₂ nanosheets are directly deposited on and within patterned gold leads made on SiO₂ substrate to immediately form arrays of photodetector. Optical and electrical response of such a photodetector is examined at different wavelengths and light powers. Such a facile fabrication can convey to a straightforward approach for large scale and transfer free implementing V-MoS₂ nanosheets in optoelectronic elements.