Impacts of the lattice strain on perovskite light-emitting diodes

The development of perovskite light-emitting diodes (PeLEDs) with both high efficiency and excellent stability remains challenging. Herein, a strong correlation between the lattice strain in perovskite films and the stability of resulting PeLEDs is revealed. Based on high-efficiency PeLEDs, the device lifetime is optimized by rationally tailoring the lattice strain in perovskite films. A PeLED with a high peak external quantum efficiency of 18.2% and a long lifetime of 151 h (T${}_{70}$, under a current density of 20 mA cm${}^{-2}$) is realized with a minimized lattice strain in the perovskite film. In addition, an increase in the lattice strain is found during the long-time device stability test, indicating that the degradation of the local perovskite lattice structure could be one of the degradation mechanisms for long-term stable PeLEDs. (© 2022 The Authors. Advanced Energy Materials published by Wiley‐VCH GmbH)