Directly drawn top-gate semiconducting carbon nanotube thin-film transistors and complementary inverters

As the emerging demand for electronic devices that are simple, cost effective and capable of rapid fabrication has increased, novel fabrication techniques for designing and manufacturing such devices have attracted remarkable research interest. One method for prototyping these electronic devices is to draw them using a handwriting tool that is commonly available. In this work, we demonstrate a transistor and complementary logic inverter that are directly drawn using a brush and that are based on solution-based materials such as semiconducting carbon nanotubes (CNTs), silver ink and paste, and cross-linked poly(4-vinylphenol) (cPVP). The directly drawn CNT thin-film transistor (TFT) has p-type behavior due to the adsorption of oxygen and moisture, a high current on/off ratio (approximately 10³), and a low operating voltage. By employing a solution-based chemical doping treatment with an amine-rich polymer, polyethyleneimine (PEI), that has strong electron-donating ability, the drawn p-type CNT-TFT is successfully converted to an n-type CNT-TFT. Therefore, we fabricate a drawn complementary logic inverter consisting of the p-type CNT-TFT and PEI-treated n-type CNT-TFT and evaluate its electrical performance. (letter)