Published May 1987 | Version v1
Journal article Metadata-only

Effect of growth microdefects on the formation of radiation-induced defects in silicon

Creators

  • 1. Belorusskij Gosudarstvennyj Univ., Minsk

Description

no abstract available

Additional details

Additional titles

Original title (Russian)
Влияние ростовых микродефектов на образование радиационных дефектов в кремнии

Publishing Information

Journal Title
Fiz. Tekh. Poluprovodn.
Journal Volume
21
Journal Issue
5
Series
Fiz. Tekh. Poluprovodn.
Journal Page Range
959-960
ISSN
0015-3222
CODEN
FTPPA

INIS

Country of Publication
Russian Federation
Country of Input or Organization
USSR
INIS RN
19010129
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract
Descriptors DEI
CHARGE CARRIERS; CRYSTALS; E CENTERS; GAMMA RADIATION; HALL EFFECT; LIFETIME; PHYSICAL RADIATION EFFECTS; SILICON
Descriptors DEC
COLOR CENTERS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ELEMENTS; IONIZING RADIATIONS; POINT DEFECTS; RADIATION EFFECTS; RADIATIONS; SEMIMETALS; VACANCIES

Optional Information

Notes
Short note.