Published 1985 | Version v1
Report Open

Implantation and thermal annealing behaviour of Bi implanted into Al/Ti bilayer structure

Creators

  • 1. Rio Grande do Sul Univ., Porto Alegre (Brazil). Inst. de Fisica
  • 2. Hahn-Meitner-Institut fuer Kernforschung Berlin G.m.b.H. (Germany, F.R.)

Description

no abstract available

Files

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Additional details

Publishing Information

Imprint Title
Progress report 1983-1984-Instituto de Fisica-Universidade Federal do Rio Grande do Sul
Imprint Pagination
175 p.
Journal Page Range
p. 15-16.
Report number
INIS-BR--506

INIS

Country of Publication
Brazil
Country of Input or Organization
Brazil
INIS RN
17052907
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract
Descriptors DEI
ALUMINIUM; ANNEALING; BACKSCATTERING; BISMUTH IONS; HIGH TEMPERATURE; ION IMPLANTATION; KEV RANGE 100-1000; LAYERS; MEDIUM TEMPERATURE; MONTE CARLO METHOD; RUTHERFORD SCATTERING; SPATIAL DISTRIBUTION; THERMAL DIFFUSION; TITANIUM
Descriptors DEC
ATOMIC IONS; CHARGED PARTICLES; DIFFUSION; DISTRIBUTION; ELASTIC SCATTERING; ELEMENTS; ENERGY RANGE; HEAT TREATMENTS; IONS; KEV RANGE; METALS; SCATTERING; TRANSITION ELEMENTS

Optional Information

Notes
Published in summary form only.