Defect-cluster formation in high-energy-density cascades in gold
Creators
- 1. Kernforschungsanlage Juelich G.m.b.H. (Germany, F.R.). Inst. fuer Festkoerperforschung
- 2. Argonne National Lab., IL (USA)
Description
Defect-cluster formation in Au following room-temperature atomic (Bi+) and diatomic (Bi2+) heavy-ion irradiation at low energies (10 and 20 keV atom-1, respectively) has been investigated by transmission electron microscopy. The microscopic analysis showed mainly clustering of vacancies into dislocation loops under all conditions investigated. At low doses the fraction of visible cascade events increased with increasing energy and energy density. Evaluation of the size distributions indicated a more efficient separation of self-interstitial atoms and vacancies in denser cascades. Cluster depth distributions were compared with calculated damage distributions and with vacancy distributions obtained from MARLOWE computer simulations. Experimental and calculated distributions are in reasonable agreement for monatomic projectiles; diatomic projectiles led to much greater average cluster depths. This new effect, first observed in Au, has also been found in Si and Ge, which indicates that it is a rather general phenomenon under such conditions. At higher doses the interaction of cascades with preformed defect structures led to an increase of the average size of vacancy loops as saturation was approached at a cluster density of about 1014 cm-2. (author)
Additional details
Publishing Information
- Journal Title
- Philos. Mag. A
- Journal Volume
- 57
- Journal Issue
- 3
- Series
- Philos. Mag. A.
- Journal Page Range
- 479-498
- ISSN
- 0141-8610
- CODEN
- PMAAD
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 19054455
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- BISMUTH IONS; COMPUTERIZED SIMULATION; DEPTH; DISLOCATIONS; ENERGY DENSITY; ENERGY DEPENDENCE; GERMANIUM; GOLD; IRRADIATION; PHYSICAL RADIATION EFFECTS; SILICON; SPATIAL DISTRIBUTION; TRANSMISSION ELECTRON MICROSCO; VACANCIES
- Descriptors DEC
- ATOMIC IONS; CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIMENSIONS; DISTRIBUTION; ELECTRON MICROSCOPY; ELEMENTS; IONS; LINE DEFECTS; METALS; MICROSCOPY; POINT DEFECTS; RADIATION EFFECTS; SEMIMETALS; SIMULATION; TRANSITION ELEMENTS