Defect formation in the surface layer of silicon implanted with high-energy ions: research by indentation method

Defect formation processes in silicon implanted with high-energy B+, Ar+ and O+ ions with an energy density of ∼1 MeV/amu was investigated by microhardness and Hall effect methods. Implantation leads to surface hardening of silicon monocrystals caused by electrically inactive interstitial defects which are formed as a result of diffusion of own interstitials from the implanted region to the surface. The effect of surface radiating hardening depends on a kind, energy and a doze of implanted ions. At B+ implantation the specified effect reached the maximum at a doze of implantation of ∼5·1014 cm2, but it did not reach the saturation even at the maximal doze of 1·1016 cm2 for oxygen and argon ions. In increasing the ion energy density up to ∼3 MeV/amu (implantation Kr+, 210 MeV) a boomerang dishardening effect caused by the formation of radiating defects mainly of vacant type is observed. (authors)