Radiation modification of III-V semiconductor compounds for enhancement of the magnetic field sensors parameters stability

It is experimentally confirmed that a preliminary radiation modification of In-containing III-V semiconductor compounds is effective method for a parameters stability improvement of Hall sensors based on these compounds when operating in the fluxes of reactor neutrons up to fluence 4×10¹⁷ n∙cm^-2. The mechanism responsible for a sensor sensitivity stabilization is described. The optimal level of nuclear doping taken place at radiation modification is determined, which provides the largest sensors parameters stability in radiation environment. (authors)