Published April 1, 2016 | Version v1
Journal article

Time Evolution of Stress and Microstructure in Electroplated Copper Films

  • 1. Physics Department, Mount Allison University, 67 York Street, Sackville E4L 1E6, NB (Canada)
  • 2. Atotech Deutschland GmbH, Erasmusstrasse 20, 10553 Berlin (Germany)

Description

The time evolution of galvanically plated copper films designed for semi additive processing (SAP) was investigated. Blanket copper films were plated at three current densities. Stress was monitored with the substrate curvature method during and after film growth. Lattice strain and crystallite size were monitored with X-ray diffraction. At room temperature, all the films recrystallized after a few hours of plating. During recrystallization, stress in the deposit increased and the microstructure coarsened. Differential scanning calorimetry (DSC) measurements were performed to predict isothermal recrystallization. Calculated recrystallization profiles based on the DSC data are compared with the actual processes observed by the evolution of the stress and strain.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.electacta.2016.02.167

Additional details

Identifiers

DOI
10.1016/j.electacta.2016.02.167;
PII
S0013-4686(16)30469-8;

Publishing Information

Journal Title
Electrochimica Acta
Journal Volume
196
Journal Page Range
p. 479-486
ISSN
0013-4686
CODEN
ELCAAV

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
48099462
Subject category
S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
Descriptors DEI
CALORIMETRY; COPPER; CURRENT DENSITY; FILMS; MICROSTRUCTURE; RECRYSTALLIZATION; STRESSES; TEMPERATURE RANGE 0273-0400 K; X-RAY DIFFRACTION
Descriptors DEC
COHERENT SCATTERING; DIFFRACTION; ELEMENTS; METALS; SCATTERING; TEMPERATURE RANGE; TRANSITION ELEMENTS

Optional Information

Copyright
Copyright (c) 2016 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.