Time Evolution of Stress and Microstructure in Electroplated Copper Films
Creators
- 1. Physics Department, Mount Allison University, 67 York Street, Sackville E4L 1E6, NB (Canada)
- 2. Atotech Deutschland GmbH, Erasmusstrasse 20, 10553 Berlin (Germany)
Description
The time evolution of galvanically plated copper films designed for semi additive processing (SAP) was investigated. Blanket copper films were plated at three current densities. Stress was monitored with the substrate curvature method during and after film growth. Lattice strain and crystallite size were monitored with X-ray diffraction. At room temperature, all the films recrystallized after a few hours of plating. During recrystallization, stress in the deposit increased and the microstructure coarsened. Differential scanning calorimetry (DSC) measurements were performed to predict isothermal recrystallization. Calculated recrystallization profiles based on the DSC data are compared with the actual processes observed by the evolution of the stress and strain.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.electacta.2016.02.167Additional details
Identifiers
- DOI
- 10.1016/j.electacta.2016.02.167;
- PII
- S0013-4686(16)30469-8;
Publishing Information
- Journal Title
- Electrochimica Acta
- Journal Volume
- 196
- Journal Page Range
- p. 479-486
- ISSN
- 0013-4686
- CODEN
- ELCAAV
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48099462
- Subject category
- S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Descriptors DEI
- CALORIMETRY; COPPER; CURRENT DENSITY; FILMS; MICROSTRUCTURE; RECRYSTALLIZATION; STRESSES; TEMPERATURE RANGE 0273-0400 K; X-RAY DIFFRACTION
- Descriptors DEC
- COHERENT SCATTERING; DIFFRACTION; ELEMENTS; METALS; SCATTERING; TEMPERATURE RANGE; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2016 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.