Published 2001
| Version v1
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Technologies of modern semiconductor materials science: proton beams
Creators
- 1. Sankt-Peterburgskij Gosudarstvennyj Tekhnicheskij Univ., Sankt-Peterburg (Russian Federation)
- 2. Fiziko-Tekhnicheskij Inst. im. A.F. Ioffe RAN, Sankt-Peterburg (Russian Federation)
Description
no abstract available
Files
34049216.pdf
Files
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Additional details
Additional titles
- Original title (Russian)
- Технологии современного полупроводникового материаловедения: протонные пучки
Publishing Information
- Publisher
- MGU
- Imprint Place
- Moscow (Russian Federation)
- Imprint Title
- Theses of reports of 31. International conference on physics of interaction of charged particles with crystals
- Imprint Pagination
- 160 p.
- Journal Page Range
- p. 137
- Report number
- INIS-RU--463
Conference
- Title
- 31. International conference on physics of interaction of charged particles with crystals
- Original Conference Title
- 31. Mezhdunarodnaya konferentsiya po fizike vzaimodejstviya zaryazhennykh chastits s kristallami
- Dates
- 28-30 May 2001
- Place
- Moscow (Russian Federation)
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 34049216
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract, Conference
- Descriptors DEI
- CRYSTAL DEFECTS; CRYSTAL DOPING; PHYSICAL RADIATION EFFECTS; PROTON BEAMS; SEMICONDUCTOR MATERIALS; TECHNOLOGY ASSESSMENT
- Descriptors DEC
- BEAMS; CRYSTAL STRUCTURE; MATERIALS; NUCLEON BEAMS; PARTICLE BEAMS; RADIATION EFFECTS
Optional Information
- Notes
- Imprint:Tezisy dokladov 31. Mezhdunarodnoj konferentsii po fizike vzaimodejstviya zaryazhennykh chastits s kristallami