Effect of silicon doping in HFO2 nanoparticles from an atomic view
Creators
- 1. Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil)
Description
We have prepared the Hafnium Oxide (HfO2) nanoparticles (NPs) doped with 5% at. of silicon (Si) using the sol-gel chemical method. Nuclear quadrupole interactions at Hf sites were investigated by perturbed γ–γ angular correlations (PAC) spectroscopy using 181Ta as probe nuclei. This method is based on the hyperfine interactions between the nuclear moments of the probe nuclei with extra-nuclear magnetic fields or electric field gradients (EFGs). In the case of quadrupolar electric interactions, experimental measurements give the quadrupole frequency νQ with respective distribution (δ) as well the asymmetry parameter η of of the EFG. The hyperfine parameters were measured within the range from 200°C to 900°C. The structural and morphological characterization of the samples were carried out by X-ray diffraction and scanning electron microscopy (SEM) with electron back scattering diffraction (EBSD). PAC results show a major site fraction of probe nuclei, that was assigned to the monoclinic phase of HfO2, with approximately 60% population, which increases when the temperature of heat treatment increases. The XRD results showed a single phase with the expected monoclinic structure for the as-prepared samples indicating that Si atoms are at substitutional Hf sites. (author)
Files
49009693.pdf
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Additional details
Publishing Information
- Imprint Pagination
- 8 p.
- Report number
- INIS-BR--19526
Conference
- Title
- International Nuclear Atlantic Conference
- Acronym
- INAC 2017
- Dates
- 22-27 Oct 2017
- Place
- Belo Horizonte, MG (Brazil)
INIS
- Country of Publication
- Brazil
- Country of Input or Organization
- Brazil
- INIS RN
- 49009693
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- DOPED MATERIALS; HAFNIUM OXIDES; NANOPARTICLES; PERTURBED ANGULAR CORRELATION; QUADRUPOLES; SCANNING ELECTRON MICROSCOPY; SILICON; SOL-GEL PROCESS; SPECTROSCOPY; TANTALUM 181; TEMPERATURE DEPENDENCE; X-RAY DIFFRACTION
- Descriptors DEC
- ANGULAR CORRELATION; CHALCOGENIDES; COHERENT SCATTERING; CORRELATIONS; DIFFRACTION; ELECTRON MICROSCOPY; ELEMENTS; HAFNIUM COMPOUNDS; HEAVY NUCLEI; ISOTOPES; MATERIALS; MICROSCOPY; MULTIPOLES; NUCLEI; ODD-EVEN NUCLEI; OXIDES; OXYGEN COMPOUNDS; PARTICLES; REFRACTORY METAL COMPOUNDS; SCATTERING; SEMIMETALS; STABLE ISOTOPES; TANTALUM ISOTOPES; TRANSITION ELEMENT COMPOUNDS