Published January 1986
| Version v1
Journal article
Analytical calculation of radiation defect and impurity distribution after ion implantation with limit doses
- 1. Kievskij Gosudarstvennyj Univ. (Ukrainian SSR)
Description
The analytical dependence of the stationary impurity concentration in a target on the depth after ion implantation with limit doses accounting for surface sputtering. The simple form of dependence is bound with approximation found for calculating the coefficient of radiation-stimulated diffusion. Profiles of ion-implanted impurity for some ion-target combinations are calculated
Additional details
Additional titles
- Original title (Russian)
- Аналитический расчет распределений радиационных дефектов и примеси при предельных дозах ионного легирования
Publishing Information
- Journal Title
- Fiz. Met. Metalloved.
- Journal Volume
- 61
- Journal Issue
- 1
- Series
- Fiz. Met. Metalloved.
- Journal Page Range
- 16-20
- ISSN
- 0015-3230
- CODEN
- FMMEA
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 17056302
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANALYTICAL SOLUTION; CHROMIUM IONS; CRYSTAL DOPING; DIFFUSION LENGTH; ION IMPLANTATION; IRON; KEV RANGE 10-100; NICKEL IONS; RADIATION DOSES; SCATTERING
- Descriptors DEC
- ATOMIC IONS; CHARGED PARTICLES; ELEMENTS; ENERGY RANGE; IONS; KEV RANGE; METALS; TRANSITION ELEMENTS
Optional Information
- Notes
- For English translation see the journal Physics of Metals and Metallography (USA).