Published July 1, 2020 | Version v1
Journal article

Gd impurity effect on the magnetic and electronic properties of hexagonal Sr ferrites: A case study by DFT

  • 1. Department of Chemistry, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of)
  • 2. Department of Chemistry, Yadegar-e-Imam Khomeni(RAH)shahr-e-Rey Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of)
  • 3. Department of Chemistry, South Tehran Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of)
  • 4. Department of Chemistry,Qaemshahr Branch, Islamic Azad University, Qaemshahr (Iran, Islamic Republic of)

Description

The electronic and magnetic properties of strontium hexa-ferrite (SrFe12O19) are studied in pure state (SrFe12O19) and with dopant in the positions 2 and 3 of Fe atoms (SrGdFe11O19-I and SrGdFe11O19-II, respectively) by utilizing a variety of the density functional theory (DFT) approaches including the Perdew–Burke–Ernzerhof generalized gradient approximation (PBE-GGA) and GGA plus Hubbard U parameter (GGA+U). The pure SrFe12O19 is a hard magnetic half-metal with an integer magnetic moment of 64.00μ B, while using the GGA+U functional, the magnetic intensity increases, resulting in a magnetic semiconductor with a high integer magnetic moment of 120μ B. By doping the Gd atom in the two different positions of Fe, the magnetic moment is increased to 71.68μ B and 68.00μ B, respectively. The magnetic moment increases and remains an integer; hence, SrGdFe11O19-II can be very useful for application in magnetic memories. Moreover, applying the Hubbard parameter turns SrGdFe11O19-I and SrGdFe11O19-II to magnetic semiconductors with a magnetic moment of 124μ B, and the energy gap of both doped structures at spin down is found to be less than the pure case. By studying the electronic density diagram of the atoms of the crystal, it is found that the major effect to create magnetization in the pure case is due to the Fe atom. However, in the doped case, the elements Gd and Fe have the highest moment in the crystal respectively. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-1056/ab8d9f

Additional details

Identifiers

Publishing Information

Journal Title
Chinese Physics. B
Journal Volume
29
Journal Issue
7
Journal Page Range
[7 p.]
ISSN
1674-1056