Published 2015
| Version v1
Journal article
Memristors based on lithium doped ZnO films
- 1. Institute for Physical Research NAS, Ashtarak (Armenia)
Description
The memristor memory cell ReRAM has been developed and studied. The developed structure consists of a Schottky diode (1D) based on ZnO:Ga/ZnO:Li/ZnO heterostructure and memristor (1R) based on Pt/ZnO/ZnO:Li/Al heterostructure. Thus the unipolar memristor memory cell of 1D1R type was obtained. The heterostructures were created by the vacuum electron-beam evaporation method. The laboratory samples of the memory cells were prepared and their characteristics were studied
Additional details
Additional titles
- Original title (Russian)
- Мемристори на основе легированних литием плёнок ZnO
Identifiers
Publishing Information
- Journal Title
- Izvestiya National'noj Akademii Nauk Armenii. Fizika
- Journal Volume
- 50
- Journal Issue
- 3
- Journal Page Range
- p. 368-374
- ISSN
- 1025-5613
- CODEN
- IAAFF8
INIS
- Country of Publication
- Armenia
- Country of Input or Organization
- Armenia
- INIS RN
- 47112014
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- DATA PROCESSING; EQUIPMENT; LITHIUM; MEMORY DEVICES; RESISTORS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DIODES; ZINC OXIDES
- Descriptors DEC
- ALKALI METALS; CHALCOGENIDES; ELECTRICAL EQUIPMENT; ELEMENTS; EQUIPMENT; METALS; OXIDES; OXYGEN COMPOUNDS; PROCESSING; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; ZINC COMPOUNDS