Formation of partially coherent antimony precipitates in ion implanted thermally annealed silicon

Thermal annealing of a supersaturated solid solution of antimony in silicon results in the formation of partially coherent antimony precipitates. Transmission electron microscopy and microdiffraction studies show the precipitates to be bounded by ]112] Si surfaces with the ]111] Si and ]1012] Sb planes coherent across the interface. The role of dislocations in the growth of the precipitates is discussed