Published February 15, 1983
| Version v1
Journal article
Role of dangling-bond defects in early recombination in hydrogenated amorphous silicon
Creators
- 1. Applied Physics and Laser Spectroscopy Group, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720
Description
Relaxation of photoexcited carriers is studied in a-Si:H with the use of photoinduced ir absorption. The role of the dangling-bond defect in recombination is investigated with samples of defect density from 1015 to >1018 cm-3. We find that during the first microsecond the dangling bond does not cause rapid recombination, but rather actually slows recombination by acting indirectly through its influence on the density and shape of the exponential distribution of states near the band edge
Additional details
Publishing Information
- Journal Title
- Phys. Rev., B: Condens. Matter
- Journal Volume
- 27
- Journal Issue
- 4
- Series
- Phys. Rev., B: Condens. Matter.
- Journal Page Range
- 2598-2601
- ISSN
- 0163-1829
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 14782972
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ABSORPTION SPECTRA; AMORPHOUS STATE; CHEMICAL BONDS; HYDROGENATION; INFRARED SPECTRA; RECOMBINATION; RELAXATION; SILICON
- Descriptors DEC
- CHEMICAL REACTIONS; ELEMENTS; SEMIMETALS; SPECTRA