Published December 1, 2018
| Version v1
Journal article
Droplet epitaxy of In/AlGaAs nanostructures on the As-stabilized surface
- 1. Department of Nanotechnologies and Microsystems, Southern Federal University, Taganrog 347922 (Russian Federation)
- 2. Research and Education Center "Nanotechnologies", Southern Federal University, Taganrog 347922 (Russian Federation)
Description
The article presents the results of experimental studies of the regimes of formation of self-organizing In/AlGaAs nanostructures by the method of droplet epitaxy under As-stabilization conditions at different Al content in the surface layer. Dependences of the influence of the growth temperature, surface composition, and deposition thickness on the geometric characteristics of the In nanodroplet arrays such as density, size and dispersion. The possibility of controlling the parameters of nanostructures array by changing the Al content in the surface layer. An unusual dynamics of the change in the critical thickness of the formation of In nanodroplers is revealed with a change in the composition of the surface. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1742-6596/1124/2/022018Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 1124
- Journal Issue
- 2
- Journal Page Range
- [6 p.]
- ISSN
- 1742-6596
Conference
- Title
- 5. International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures
- Acronym
- Saint Petersburg OPEN 2018
- Dates
- 2-5 Apr 2018
- Place
- Saint Petersburg (Russian Federation)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 53021513
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINIUM ARSENIDES; DENSITY; DEPOSITION; DROPLETS; EPITAXY; GALLIUM ARSENIDES; GEOMETRY; LAYERS; NANOSTRUCTURES; STABILIZATION; SURFACES
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; GALLIUM COMPOUNDS; MATHEMATICS; PARTICLES; PHYSICAL PROPERTIES; PNICTIDES