Electronic structure and optical properties of the B12O2 crystal
Creators
- 1. Department of Physics, University of Missouri--Kansas City, Kansas City, Missouri 64110 (United States)
Description
The electronic structure and the optical properties of the icosahedral B12O2 crystal are studied by means of first-principles calculations. The results are compared with the other B12-based compounds with the same rhombohedral crystal structure. B12O2 is a semiconductor with a direct band gap of about 2.40 eV at Z. It is shown that intericosahedral bonding is stronger than the intraicosahedral bonding in B12O2. There is no covalent bonding between the O atoms and a net charge transfer from the B12 icosahedron to the O atoms. From the calculated complex dielectric function and energy-loss function, the static dielectric constant and bulk plasmon frequency in B12O2 are estimated to be 3.4 and 26.9 eV, respectively, which are smaller than that of other B12-based compounds. copyright 1996 The American Physical Society
Additional details
Publishing Information
- Journal Title
- Physical Review. B, Condensed Matter
- Journal Volume
- 54
- Journal Issue
- 3
- Journal Page Range
- p. 1451-1454.
- ISSN
- 0163-1829
- CODEN
- PRBMDO
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 27074424
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- BORON OXIDES; ELECTRONIC STRUCTURE; ENERGY GAP; OPTICAL PROPERTIES; PERMITTIVITY; PLASMONS; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- BORON COMPOUNDS; CHALCOGENIDES; DIELECTRIC PROPERTIES; ELECTRICAL PROPERTIES; MATERIALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; QUASI PARTICLES