Published April 2014 | Version v1
Journal article

High-performance silicon photonics technology for telecommunications applications

  • 1. Nanophotonics Center, NTT Corporation 3-1, Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198 Japan (Japan)
  • 2. Microsystem Integration Laboratories, NTT Corporation 3-1, Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198 Japan (Japan)
  • 3. Department of Materials Engineering, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo, 113-8656 Japan (Japan)

Description

By way of a brief review of Si photonics technology, we show that significant improvements in device performance are necessary for practical telecommunications applications. In order to improve device performance in Si photonics, we have developed a Si-Ge-silica monolithic integration platform, on which compact Si-Ge–based modulators/detectors and silica-based high-performance wavelength filters are monolithically integrated. The platform features low-temperature silica film deposition, which cannot damage Si-Ge–based active devices. Using this platform, we have developed various integrated photonic devices for broadband telecommunications applications. (review)

Availability note (English)

Available from http://dx.doi.org/10.1088/1468-6996/15/2/024603

Additional details

Publishing Information

Journal Title
Science and Technology of Advanced Materials
Journal Volume
15
Journal Issue
2
Journal Page Range
[10 p.]
ISSN
1468-6996

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
47048082
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CDTE SEMICONDUCTOR DETECTORS; DEPOSITION; ELECTROMAGNETIC FILTERS; GERMANIUM; PERFORMANCE; SEMICONDUCTOR MATERIALS; SILICA; SILICON; TEMPERATURE DEPENDENCE; THIN FILMS; WAVELENGTHS
Descriptors DEC
ELEMENTS; FILMS; FILTERS; MATERIALS; MEASURING INSTRUMENTS; METALS; MINERALS; OXIDE MINERALS; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SEMIMETALS