Published April 2014
| Version v1
Journal article
High-performance silicon photonics technology for telecommunications applications
Creators
- 1. Nanophotonics Center, NTT Corporation 3-1, Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198 Japan (Japan)
- 2. Microsystem Integration Laboratories, NTT Corporation 3-1, Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198 Japan (Japan)
- 3. Department of Materials Engineering, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo, 113-8656 Japan (Japan)
Description
By way of a brief review of Si photonics technology, we show that significant improvements in device performance are necessary for practical telecommunications applications. In order to improve device performance in Si photonics, we have developed a Si-Ge-silica monolithic integration platform, on which compact Si-Ge–based modulators/detectors and silica-based high-performance wavelength filters are monolithically integrated. The platform features low-temperature silica film deposition, which cannot damage Si-Ge–based active devices. Using this platform, we have developed various integrated photonic devices for broadband telecommunications applications. (review)
Availability note (English)
Available from http://dx.doi.org/10.1088/1468-6996/15/2/024603Additional details
Identifiers
Publishing Information
- Journal Title
- Science and Technology of Advanced Materials
- Journal Volume
- 15
- Journal Issue
- 2
- Journal Page Range
- [10 p.]
- ISSN
- 1468-6996
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47048082
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CDTE SEMICONDUCTOR DETECTORS; DEPOSITION; ELECTROMAGNETIC FILTERS; GERMANIUM; PERFORMANCE; SEMICONDUCTOR MATERIALS; SILICA; SILICON; TEMPERATURE DEPENDENCE; THIN FILMS; WAVELENGTHS
- Descriptors DEC
- ELEMENTS; FILMS; FILTERS; MATERIALS; MEASURING INSTRUMENTS; METALS; MINERALS; OXIDE MINERALS; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SEMIMETALS