Published February 1998 | Version v1
Report

Mechanism of H2- formation in solid hydrogen

  • 1. Hokkaido Univ., Sapporo (Japan)

Description

The singlet and the triplet ESR lines with the common g-factor of 2.0023 and the hyperfine coupling constant of 20.3 mT observed after γ-irradiation of crystalline para hydrogen at 4.2 K agreed with the expected ESR spectra of the radical anions of the para and the ortho hydrogen molecules, respectively. A novel model has been proposed for explaining the formation and stabilization of H2- in crystalline H2. The model assumes H2- to be located at the center of a cavity which has previously been occupied by a trapped electron. The excess electron of H2- is forced to be attached on one H2 in the cavity due to strong repulsive interactions between the excess electron and H2 molecules surrounding the cavity. A quantum-mechanical calculation shows that an electron trapped in the vacancy of crystalline H2 automatically converts to H2- by drawing one of the surrounding H2 molecules into the center of the vacancy. (author)

Part of:
Proceedings of the meeting on tunneling reaction and low temperature chemistry, 97 October. Tunneling reaction and quantum medium

Additional details

Publishing Information

Imprint Title
Proceedings of the meeting on tunneling reaction and low temperature chemistry, 97 October. Tunneling reaction and quantum medium
Imprint Pagination
111 p.
Journal Page Range
p. 12-21
Report number
JAERI-Conf--98-002

Conference

Title
3. meeting on tunneling reaction and low temperature chemistry
Dates
13-14 Oct 1997
Place
Tokai, Ibaraki (Japan)

Optional Information