Published November 2004
| Version v1
Journal article
Versatile UHV compatible Knudsen type effusion cell
Creators
- 1. Fritz Haber Institute der Max Planck Gesellschaft, Faradayweg 4-6, 14195, Berlin (Germany)
- 2. Inter University Consortium for Department of Atomic Energy Facilities, Khandwa Road, Indore, 452017, Madhya Pradesh (India)
Description
A versatile Knudsen type effusion cell has been fabricated for growing nanostructures and epitaxial layers of metals and semiconductors. The cell provides excellent vacuum compatibility (10-10 mbar range during operation), efficient water cooling, uniform heating, and moderate input power consumption (100 W at 1000 deg. C). The thermal properties of the cell have been determined. The performance of the cell has been assessed by x-ray photoemission spectroscopy (XPS) for Mn adlayer growth on Al(111). We find that this Knudsen cell has a stable deposition rate of 0.17 monolayer per minute at 550 deg. C. From the XPS spectra, we show that the Mn adlayers are completely clean, i.e., devoid of any surface contamination
Additional details
Identifiers
- DOI
- 10.1063/1.1793892;
Publishing Information
- Journal Title
- Review of Scientific Instruments
- Journal Volume
- 75
- Journal Issue
- 11
- Journal Page Range
- p. 4467-4470
- ISSN
- 0034-6748
- CODEN
- RSINAK
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36085000
- Subject category
- S36: MATERIALS SCIENCE; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- COOLING; DIFFUSION; EPITAXY; HEATING; MANGANESE; NANOSTRUCTURES; PERFORMANCE; PHOTOEMISSION; SEMICONDUCTOR MATERIALS; SURFACE COATING; SURFACE CONTAMINATION; THERMODYNAMIC PROPERTIES; X-RAY PHOTOELECTRON SPECTROSCOPY
- Descriptors DEC
- CONTAMINATION; CRYSTAL GROWTH METHODS; DEPOSITION; ELECTRON SPECTROSCOPY; ELEMENTS; EMISSION; MATERIALS; METALS; PHOTOELECTRON SPECTROSCOPY; PHYSICAL PROPERTIES; SECONDARY EMISSION; SPECTROSCOPY; TRANSITION ELEMENTS
Optional Information
- Notes
- (c) 2004 American Institute of Physics