Published November 2004 | Version v1
Journal article

Versatile UHV compatible Knudsen type effusion cell

  • 1. Fritz Haber Institute der Max Planck Gesellschaft, Faradayweg 4-6, 14195, Berlin (Germany)
  • 2. Inter University Consortium for Department of Atomic Energy Facilities, Khandwa Road, Indore, 452017, Madhya Pradesh (India)

Description

A versatile Knudsen type effusion cell has been fabricated for growing nanostructures and epitaxial layers of metals and semiconductors. The cell provides excellent vacuum compatibility (10-10 mbar range during operation), efficient water cooling, uniform heating, and moderate input power consumption (100 W at 1000 deg. C). The thermal properties of the cell have been determined. The performance of the cell has been assessed by x-ray photoemission spectroscopy (XPS) for Mn adlayer growth on Al(111). We find that this Knudsen cell has a stable deposition rate of 0.17 monolayer per minute at 550 deg. C. From the XPS spectra, we show that the Mn adlayers are completely clean, i.e., devoid of any surface contamination

Additional details

Identifiers

Publishing Information

Journal Title
Review of Scientific Instruments
Journal Volume
75
Journal Issue
11
Journal Page Range
p. 4467-4470
ISSN
0034-6748
CODEN
RSINAK

Optional Information

Notes
(c) 2004 American Institute of Physics