The production of hard i-BN films on silicon substrates by ion beam

This paper reports the concentrations of the main constituents of hard i-BN films produced by the ion beam assisted deposition measured using the nuclear resonance reactions 11B(p,γ)12C at Ep = 163 KeV, and 15N(p,γ)12C at Ep = 429 KeV, respectively. The hydrogen contamination of the samples was investigated. using the forward recoil spectroscopy (FRES)technique with a 2 MeV He + beam. Some complementary analyses of carbon and oxygen were performed using (d,p) and (d,γ)- reactions. Hyperstoichiometric boron concentration were found in almost all films. The relative concentrations of nitrogen and boron were also slightly dependent on the deposition conditions as well as the deposition temperature. Contrary to this, hydrogen contamination, that was generally at a low level with few exceptions, was more independent of these parameters