Negative-U property of interstitial hydrogen in GaAs
- 1. Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32-46, 02-668 Warsaw (Poland)
- 2. Department of Physics and Astronomy, University of Aarhus, DK-8000 Aarhus C (Denmark)
Description
We identify the donor level of interstitial hydrogen in GaAs, which is characterized by the activation enthalpy EC-Et=0.13 eV. This level is the marker of two different but closely related defect structures, which are indistinguishable as far as their emission properties are concerned; however, discernible on the basis of their different dynamical behaviors are revealed by annealing studies. We interpret the two structures as regular bond center hydrogen H(BC) and bond center hydrogen H(BC'), which is perturbed by the local strain from a neighbor point defect. We demonstrate negative-U properties of the perturbed structure and infer that the corresponding acceptor H(T') lies deep in the band gap. These results for interstitial hydrogen in GaAs are in every aspect analogous to the properties of interstitial hydrogen in Si
Additional details
Identifiers
Publishing Information
- Journal Title
- Physical Review. B, Condensed Matter and Materials Physics
- Journal Volume
- 78
- Journal Issue
- 3
- Journal Page Range
- p. 035211-035211.7
- ISSN
- 1098-0121
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40023509
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; CRYSTAL DEFECTS; EMISSION; ENERGY LEVELS; ENTHALPY; GALLIUM ARSENIDES; HYDROGEN; IMPURITIES; INTERSTITIALS; SEMICONDUCTOR MATERIALS; STRAINS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; GALLIUM COMPOUNDS; HEAT TREATMENTS; MATERIALS; NONMETALS; PHYSICAL PROPERTIES; PNICTIDES; POINT DEFECTS; THERMODYNAMIC PROPERTIES
Optional Information
- Notes
- (c) 2008 The American Physical Society