Published September 21, 2001 | Version v1
Journal article

Photopeak detection by an InSb radiation detector made of liquid phase epitaxially grown crystals

  • 1. Graduate School of Engineering, Kyoto University, Sakyo, Kyoto 606-8501 (Japan)

Description

We have fabricated a radiation detector using a p-type InSb crystal grown by liquid phase epitaxy (LPE). At temperatures below 100 K, the resistivity of the LPE crystal was over an order of magnitude higher than that of the commercial InSb crystal substrate. The resistance of the InSb detector is 680 kΩ at 4.2 K, which is one order of magnitude higher than that of detectors fabricated from commercial InSb wafers and, in an improvement over previous results, the energy resolution of 241Am alpha particles reaches 3%. In addition, we also observe the photopeak of gamma-rays emitted by 133Ba.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.nima.2010.05.004

Additional details

Identifiers

DOI
10.1016/j.nima.2010.05.004;
PII
S0168-9002(10)01041-7;

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
Journal Volume
621
Journal Issue
1-3
Journal Page Range
p. 383-386
ISSN
0168-9002
CODEN
NIMAER

Optional Information

Copyright
Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.