Published February 19, 1990 | Version v1
Journal article Metadata-only

Phonon temperature overshoot in GaAs excited by subpicosecond laser pulses

Creators

  • 1. Materials and Chemical Sciences Division, Lawrence Berkeley Laboratory, 1 Cyclotron Road, Berkeley, California 94720
  • 2. Department of Physics, University of California, Berkeley, California 94720 (USA)

Description

Hot electrons and phonons excited in GaAs by subpicosecond laser pulses have been studied by inelastic light scattering for photoexcited electron densities varying between 1017 and 1019 cm-3. Transient overshoot of longitudinal-optical (LO) phonon temperature above the electron temperature has been observed. This is explained by the fast production of zone-center LO phonons by hot electrons combined with slower reabsorption of the emitted phonons due to rapid cooling of Γ valley electrons by intervalley scattering

Additional details

Publishing Information

Journal Title
Physical Review Letters
Journal Volume
64
Journal Issue
8
Series
Phys. Rev. Lett.
Journal Page Range
946-949
ISSN
0031-9007
CODEN
PRLTA

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
21055165
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ELECTRON DENSITY; ELECTRON TEMPERATURE; EPITAXY; GALLIUM ARSENIDES; INELASTIC SCATTERING; LASER RADIATION; MOLECULAR BEAMS; PHONONS; PHOTOIONIZATION; PULSES; RAMAN EFFECT; SCATTERING; SOLID-STATE PLASMA; SPECTRAL SHIFT; THICKNESS; THIN FILMS; TRANSIENTS; VERY HIGH TEMPERATURE
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; BEAMS; DIMENSIONS; ELECTROMAGNETIC RADIATION; FILMS; GALLIUM COMPOUNDS; IONIZATION; PLASMA; PNICTIDES; QUASI PARTICLES; RADIATIONS